vt.P100H - Si PD, Flat Side-looker IRT, 7.45mm2
The VTP100H is a silicon photodiode in a visible-blocking plastic molded side-looker package with an enhanced response in the near IR spectral range. This silicon photodiode exhibits a very high shunt resistance, low dark current and low capacitance.
这是一个快速响应硅光电二极管提供7.45毫米2active area and is designed for spectral response between 725 nm and 1150 nm.
This series of photodiodes is designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. These photodiodes can also be operated in photovoltaic mode in applications where speed of response is not critical.
These devices have excellent response in the IR spectral range and are well matched to the Excelitas Infrared LED VTE Series.
Features & Benefits:
- Near IR spectral range
- 超过7到9年的线性度为1至2％
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- RoHs compliant
bob投注体育信赖吗应用程序:
- 烟雾检测
- Barcode scanning
- 轻米
- 脉冲血管计
Active area = 7.45 mm2active area
短路电流= 100 fc，2850 k的最小35μA
暗电流= 10 V反向偏置的最大30纳
结电容= 3 V反向偏置的最大50 PF
击穿电压=最小30 V
光谱范围= 725nm至1150nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.50 A/W
角度响应= 50％反应下的±70度
Active area = 7.45 mm2active area
短路电流= 100 fc，2850 k的最小35μA
暗电流= 10 V反向偏置的最大30纳
结电容= 3 V反向偏置的最大50 PF
击穿电压=最小30 V
光谱范围= 725nm至1150nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.50 A/W
角度响应= 50％反应下的±70度